Bismuth Sulfide Thin Film Deposited by AACVD using Single Molecular Precursors

Muhammad Aslam Tahir, Wasim ullah Marwat*

Single-molecular precursors, Bis-N, N-(Diethyldithiocarbamato) bismuth (III) (SM-1) and Bis-N, N-(Dicyclohexyldithiocarbamato) bismuth (III) (SM-2) for Bi2S3 thin films were synthesized by reacting secondary amine and CS2 with bismuth chloride in acetonitrile as a solvent. These precursors were characterized by FTIR. SM-1 and SM-2 complexes undergo thermal decomposition at temperature range from 310 oC to 330 oC to give Bi2S3 residue. Thin films of bismuth sulphide were deposited on glass substrate using aero-sol assisted chemical vapor deposition (AACVD) at temperature suggested from TGA studies of SM-1 and SM-2. Surface chemistry including phase purity, particle size, and elemental composition of thin films were determined using X-ray powder diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) techniques. Thin films were found to have flakes and fiber like morphologies.